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Ф2000um InGaAs Pin Modules

Ф2000um InGaAs Pin Modules

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Description

2000um InGaAs photodiode ,FC receptacle
Specification

Parameter

Symbol

Value

Unit

Reverse Voltage

VR

30

V

Case Temperature

TOP

-40 ～ +65

℃

Storage Temperature

TST

-40 ～ +85

℃

Absolute Maximum Ratings

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Responsivity

R

VR=-5V

0.8

0.85

-

A/W

Dark current

Id

VR=-5V

-

-

10

nA

Detection range

λ

-

800

-

1700

nm

Dynamic Range

LR

VR=-5V

-70

-

6

dBm

Active area(Dia.)

ф

-

-

2000

-

um

Rise/fall time

Tr/Tf

VR=-5V

-

10

-

ns

Capacitance

C

VR=-5V

-

100

150

pf

 

 

 

 

 

Important Notice

Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.

The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.

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