详情介绍：
此款位移传感器为nm级别光学位移传感器，分辨率可达10nm，测量范围100um.不同于常用的电容式位移传感器，由于其采用光学设计，具有对电磁**，可用于复杂的强电磁环境中。由于采用多种技术，使其灵敏度达到干涉仪级别。
具有如下特色：
1.对温度变化不敏感。
2.对电场，磁场及电磁辐射**。
3.具有大的可测范围，对传感器定位精度要求不高。
4.具有高的测量带宽，适合于振动分析及高速测量。
5.具有小的测试区域。测试点大小可为30um~400um的测试光斑。

可应用于如下各场合：
1.定位控制。
2.振动测试。
3.离轴测量。
4.表面特性测试。
5.薄膜或涂层的厚度测量。

Important Notice

Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.

The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.