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3G InGaAs Pulse APD Diode Pins for OTDR

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Description

The APD/avalanche photo diode (3G InGaAs pulse APD diode pins for OTDR) is a p-n junction photodetector made of silicon or germanium.By applying a reverse bias voltage to the p-n junction,the incident light photons will strike the electrons in order to push them through a junction,thus achieving photoelectric current flows.When the applied reverse voltage increases,an avalanche current flow will occur.The avalanche effect of the current carrier is then used to amplify the photoelectric signal in the detection system in order to improve detector sensitivity.
This photo diode series features a small dark current, low operating voltage, and high sensitivity.It can operate in the pulse output mode or DC output mode, and is often used in OTDR systems and detection equipment for Raman backscattering systems.

Absolute Maximum Ratings

Parameter	Symbol	Min.	Typ.	Max.	Unit
Forward Current	IF			10	mA
Reverse Current	IR			0.5	mA
Operating Temp.	TC	-40		85	°C
Storage Temperature	TSTG	-40		85	°C
Lead Soldering Temp.	TSOL	-		260(10s)	°c
Relative Humidity	RH	0		85	%

Optical & Electrical Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Notes
Reverse Breakdown Voltage	VBR	40	45	55	V	ID = 100 μA
Temperature Coefficient of Reverse Breakdown Voltage1	δ		0.2		%/°C
Dark Current	ID		5	25	nA	VR = VBR*0.9
Multiplied Dark Current	IDM		1	3	nA	M = 2 to 10
Terminal Capacitance	Ct		0.35		pF	VR = VBR* 0.9, f = 1 MHz
Cut-off Frequency	fC	2.5			GHz	M = 10
Quantum Efficiency	η	76	90		%	λ = 1310 nm, M = 1
Quantum Efficiency	η	65	77		%	λ = 1550 nm, M = 1
Responsivity	S	0.85	0.90		A/W	λ = 1310 nm, M = 1
Responsivity	S	0.90	0.95		A/W	λ = 1550 nm, M = 1
Excess Noise Factor	X		0.7		-	λ = 1310 nm, IPO = 1.0 μw, M = 10, f = 35 MHz, B = 1 MHz
Excess Noise Factor	F		5		-	λ = 1550 nm, IPO = 1.0 μw, M = 10, f = 35 MHz, B = 1 MHz
Optical Return Loss	ORL	30	40		dB	SMF

Important Notice

Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.

The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.